Bulklike Hot Carrier Dynamics in Lead Sulfide Quantum Dots
نویسندگان
چکیده
منابع مشابه
Carrier relaxation dynamics in lead sulfide colloidal quantum dots.
We report transient absorption saturation measurements on lead sulfide colloidal nanocrystals at the first and second exciton energies and fit the results to a model incorporating intraband and interband relaxation processes. We study in detail the Auger recombination from the first excited state, which takes place when more than one electron-hole pair is excited in a dot. We find an Auger coef...
متن کاملSlow hot-carrier relaxation in colloidal graphene quantum dots.
Reducing hot-carrier relaxation rates is of great significance in overcoming energy loss that fundamentally limits the efficiency of solar energy utilization. Semiconductor quantum dots are expected to have much slower carrier cooling because the spacing between their discrete electronic levels is much larger than phonon energy. However, the slower carrier cooling is difficult to observe due to...
متن کاملShape and Temperature Dependence of Hot Carrier Relaxation Dynamics in Spherical and Elongated CdSe Quantum Dots
Shape and Temperature Dependence of Hot Carrier Relaxation Dynamics in Spherical and Elongated CdSe Quantum Dots Liangliang Chen, Hua Bao, Taizhi Tan, Oleg V. Prezhdo,* and Xiulin Ruan* School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States Department of Chemistry, University of Rochester, Rochester, New York 14627, Unit...
متن کاملCarrier dynamics in p-type InGaAs/GaAs quantum dots
In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced sign...
متن کاملCarrier relaxation dynamics in InAs/InP quantum dots
The electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emitting around 1.55 μm are investigated. The carrier dynamics in QDs is studied by non-resonant timeresolved photoluminescence (tr-PL) experiments. This analysis reveals the QD electronic structure and the transient filling of the confined QD levels. Under low excitation densities, the spontaneous exciton lifetime is est...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nano Letters
سال: 2010
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl1010349